Effects of plasma spatial profile on conversion efficiency of laser-produced plasma sources for EUV lithography
نویسندگان
چکیده
منابع مشابه
Effects of Plasma Spatial Profile on Conversion Efficiency of Laser Produced Plasma Sources for EUV Lithography
Extreme ultraviolet (EUV) lithography devices that use laser produced plasma (LPP), discharge produced plasma (DPP), and hybrid devices need to be optimized to achieve sufficient brightness with minimum debris generation to support the throughput requirements of High-Volume Manufacturing (HVM) lithography exposure tools with long lifetime. Source performance, debris mitigation, and reflector sy...
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Efficient laser systems are essential for the realization of high volume manufacturing in extreme ultraviolet lithography (EUVL). Solid-state Nd:YAG lasers usually have lower efficiency and source suppliers are alternatively investigating the use of high power CO2 laser systems. However, CO2 laser-produced plasmas (LPP) have specific characteristics and features that should be taken into accoun...
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Tin, lithium, and xenon laser-produced plasmas are attractive candidates as light sources for extreme ultraviolet lithography (EUVL). Simulation of the dynamics and spectral properties of plasmas created in EUVL experiments plays a crucial role in analyzing and interpreting experimental measurements, and in optimizing the 13.5 nm radiation from the plasma source. Developing a good understanding...
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A high repetition-rate laser plasma source, possessing distinct radiation and particle emission characteristics, is now a principal candidate light source for the next generation of technology for the fabrication of computer chips. For these sources to satisfy this critical need they will need to meet unprecedented levels of performance, stability and lifetime. We review here some of the princi...
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Laser-produced plasma (LPP) devices have been modeled as the light source for extreme ultraviolet (EUV) lithography. A key challenge for LPP is achieving sufficient brightness to support the throughput requirements of high-volume manufacturing. An integrated model (HEIGHTS) was applied to simulate the environment of EUV sources and optimize their output. The model includes plasma evolution and ...
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ژورنال
عنوان ژورنال: Journal of Micro/Nanolithography, MEMS, and MOEMS
سال: 2009
ISSN: 1932-5150
DOI: 10.1117/1.3224901